Light emitting device with bonded interface

ABSTRACT

In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.

BACKGROUND

1. Field of Invention

The present invention relates to a semiconductor light emitting device with a doped wafer-bonded interface and/or a less absorbing etch stop layer.

2. Description of Related Art

Light emitting diodes (LEDs) are widely accepted as light sources in many applications that require low power consumption, small size, and high reliability. Energy-efficient diodes that emit light in the yellow-green to red regions of the visible spectrum contain active layers formed of an AlGaInP alloy. FIGS. 1 and 2 show the fabrication of a conventional transparent substrate (TS) AlGaInP LED. In FIG. 1, an etch stop layer 12 such as a 1000 Å n-In_(0.5)Ga_(0.5)P layer, is grown over a semiconductor substrate 10, typically GaAs. Device layers 14, including a lower confining layer, at least one (Al_(x)Ga_(1-x))_(y)In_(1-y)P active layer, and an upper confining layer, all placed in a double heterostructure configuration, are grown over etch stop layer 12, followed by an optional thick (for example, between 5 and 100 μm thick) window layer 16, often p-type GaP grown by vapor phase epitaxy. The confining layers are made of a transparent semiconductor and enhance the internal quantum efficiency of the LED, defined as the fraction of electron-hole pairs in the active layer that recombine and emit light. The window layer 16, also a transparent semiconductor, increases the spread of electric current across the active layer and enhances the internal quantum efficiency of the diode. The light emitting region may consist of a single thick uniform composition layer or a series of thin wells and barriers.

GaAs is preferred as a growth substrate because it is lattice matched to (Al_(x)Ga_(1-x))_(y)In_(1-y)P at compositions favored for the formation of LEDs that emit light in the yellow-green to red regions of the visible spectrum, at y˜0.5. Since GaAs is absorbing, it is typically removed and replaced by a transparent substrate 18, as illustrated in FIG. 2. GaAs substrate 10, shown in FIG. 1, is removed by an etch that etches GaAs at a much faster rate than etch stop layer 12. A transparent substrate 18, typically n-type GaP, is wafer bonded to the lower surface of the epitaxial structure (etch stop layer 12 in FIG. 2), generally by annealing the structure at an elevated temperature while uniaxial force is applied. LED chips are then processed from the bonded wafers using conventional metal contacts and chip fabrication techniques suitable for the p-type epitaxial GaP anode and the n-type wafer-bonded GaP cathode.

SUMMARY

In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.

In some embodiments, a light emitting device includes a first semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region, and a second semiconductor structure. A bond formed at an interface disposed between the first and second semiconductor structures connects the first semiconductor structure to the second semiconductor structure. At least one semiconductor layer at the interface is doped to a concentration of at least 2×10¹⁸ cm⁻³. Increasing the dopant concentration at the bonded interface may reduce the forward voltage of the device.

In some embodiments, a light emitting device is formed by growing a first semiconductor structure on a GaAs substrate. The first semiconductor structure includes an etch stop layer with a thickness less than 150 Å and an AlGaInP light emitting layer disposed between an n-type region and p-type region. The GaAs substrate is removed, then the first semiconductor structure is bonded to a second semiconductor structure. The etch stop layer may be InGaP or AlGaInP, and may or may not be lattice-matched to GaAs. Reducing the thickness and/or changing the bandgap of the etch stop layer may reduce absorption by the etch stop layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a prior art AlGaInP LED device structure grown over an absorbing substrate.

FIG. 2 illustrates a prior art transparent substrate AlGaInP LED.

FIG. 3 illustrates a transparent substrate AlGaInP LED with an etch stop layer that is less absorbing than a conventional etch stop layer.

FIG. 4 is a plot of energy gap as a function of lattice constant for binary, ternary, and quaternary alloys of Al, In, Ga, and P, and for GaAs.

FIG. 5 illustrates a transparent substrate AlGaInP LED with an improved wafer bonded interface.

FIG. 6 is an exploded view of a packaged light emitting device.

DETAILED DESCRIPTION

It is desired to maximize the wall plug efficiency (WPE), defined as the ratio of light extracted from a device to electrical power supplied to the device, of AlGaInP LEDs. Embodiments of the invention attempt to improve the wall plug efficiency of an AlGaInP LED by improving the optical and/or electrical characteristics of the bonded interface between the epitaxial device structure and the transparent substrate.

One method of increasing the light output of AlGaInP LEDs is to decrease the absorption of light within the device. One source of absorption is InGaP etch stop layer 12 of FIG. 2. Since InGaP has a more narrow bandgap than the AlGaInP light emitting region, etch stop layer 12 will absorb some of the light emitted by the light emitting region.

FIG. 3 illustrates a device with a less-absorbing etch stop layer 20. The fabrication of the device illustrated in FIG. 3 is similar to the device illustrated in FIG. 2. Etch stop layer 20 is grown over an absorbing substrate, followed by device layers 14 and optional thick window layer 16. The absorbing substrate is removed, and the remaining structure is wafer-bonded to a transparent substrate 18. Contacts are formed on the wafer-bonded structure, then individual LEDs are diced.

In some embodiments, etch stop layer 20 is InGaP that is lattice matched to the GaAs growth substrate as in a conventional etch stop layer, but is formed thinner than a conventional InGaP etch stop layer and is thus less absorbing than a thick etch stop layer. For example, an InGaP etch stop layer 20 may have a thickness less than 250 Å, more preferably less than 150 Å, and more preferably less than 130 Å.

In some embodiments, etch stop layer 20 is a material that has a larger band gap, and is thus more transparent, than In_(0.5)Ga_(0.5)P. The band gap may be increased by increasing the amount of aluminum in the etch stop layer, or by decreasing the amount of indium in the etch stop layer. For example, etch stop layer 20 may be a quaternary AlGaInP or a ternary InGaP layer with a larger band gap than In_(0.5)Ga_(0.5)P. In an AlGaInP or InGaP etch stop layer 20, the InP composition may be less than 50%, preferably between 40 and 50%. The AlP composition in an AlGaInP layer may be between 0 and 50%, with the optimal AlP composition depending on LED configuration. For example, in a configuration where electrical current is passed through the etch stop layer, a lower AlP composition is preferred, for example in the range from 0% AlP to 10% AlP, where 10% AlP refers to the alloy (Al_(0.20)Ga_(0.80))_(0.5)In_(0.5)P. Alternatively, in a configuration where electrical current is not pa through the etch stop layer, a higher AlP composition is preferred, for example in the range from 10% AlP to 20% AlP, where 20% AlP refers to the alloy (Al_(0.40)Ga_(0.60))_(0.5)In_(0.5)P.

Larger band gap etch stop layer 20 may or may not be lattice-matched to the GaAs growth substrate. FIG. 4 illustrates band gap as a function of lattice constant for binary, ternary, and quaternary alloys of Al, In, Ga, and P. GaAs is near the bottom of the figure. InGaP layers with an InP composition less than 50% are not lattice-matched to GaAs. Quaternary AlInGaP layers with a composition (Al_(x)Ga_(1-x))_(0.5)In_(0.5)P, shown along the vertical dashed line in FIG. 4, are lattice-matched to GaAs. Other quaternary alloys not along the vertical line, but with a higher band gap than lattice-matched InGaP, may be suitable as etch stop layer 20.

For example, a quaternary etch stop layer of (Al_(0.10)Ga_(0.90))_(0.5)In_(0.5)P could be used for an LED configured to emit light in the red region of the visible spectrum with a dominant wavelength ≧620 nm. In such a case, the thickness of the quaternary etch stop layer is preferably ≦500 Å, more preferably ≦250 Å, and more preferably ≦150 Å. Alternatively, a non-zero AlP composition may be combined with a lower InP composition to make a more transparent layer, such as (Al_(0.10)Ga_(0.90))_(0.55)In_(0.45)P. For LEDs configured to emit shorter wavelength light, such as yellow or amber light, a higher AlP composition may be preferred, such as (Al_(0.15)Ga_(0.85))_(0.5)In_(0.5)P, or (Al_(0.15)Ga_(0.85))_(0.55)In_(0.45)P. Etch stop layers with AlP compositions as high as (Al_(0.30)Ga_(0.70))_(0.5)In_(0.5)P have been shown to work, although in some examples of such LEDs with (Al_(0.30)Ga_(0.70))_(0.5)In_(0.5)P etch stop layers, the LED V_(f) has been observed to increase, possibly due to oxidation of the high AlP composition layers that are exposed to air, to the ambient in the high temperature wafer bonding process, or to the etch stop layer etching solution. One method of decreasing internal absorption while avoiding this high V_(f) may be to slowly increase the AlP composition of the etch stop layer, either in a series of discrete steps, or in a continuous ramp. Alternatively, in the event that this etch stop layer is not used as an electrical contact layer, oxidation at this etch stop layer is not a problem, and even higher AlP compositions can be used, such as (Al_(0.40)Ga_(0.60))_(0.5)In_(0.5)P or (Al_(0.40)Ga_(0.60))_(0.55)In_(0.45)P, with no V_(f) penalty.

The emission spectrum of an LED is given approximately by FWHM≈1.8 kT, where FWHM is the full width at half maximum of the LED emission spectrum measured in eV, k is Boltzman's constant, and T is the LED temperature in Kelvin. To minimize internal absorption within the etch stop layer, the bandgap of the etch stop layer should thus be increased to a value of at least approximately 1.8 kT above the bandgap energy of the active layer. Since room temperature corresponds to roughly 25 meV, and since a biased LED will heat up above room temperature, in some embodiments the bandgap of the etch stop layer is increased to a value of at least 50 meV above the bandgap of the active layer, using increased AlP composition or decreased InP composition, or both.

In devices where the light emitting layer emits long wavelength light, such as red and red-orange light, the AlP composition in the light emitting layer is low enough that etch stop layer 20 may be made transparent. For example, an LED configured to emit red light may have an active layer composition of (Al_(0.05)Ga_(0.95))_(0.5)In_(0.5)P. In such a case, the etch stop layer may be made transparent by using an etch stop layer with compositions such as (Al_(0.15)Ga_(0.85))_(0.5)In_(0.5)P or (Al_(0.10)Ga_(0.90))_(0.55)In_(0.45)P. In such cases where the etch stop layer is transparent, the thickness of the etch stop layer is limited by strain and the Matthews-Blakeslee critical thickness, so thicker etch stop layers may be used, up to for example 500 Å thick. In some cases it may be impractical to increase the bandgap of the etch stop layer more than 50 meV above the active layer bandgap, so a compromise between the conventional etch stop layer 12 in FIG. 1 and the transparent etch stop layer described above may be preferred. For example, an etch stop layer with bandgap equal to or slightly greater than the active layer bandgap may be preferred in some case, while in other cases, an etch stop layer with bandgap=active layer bandgap+kT≈active layer bandgap+0.025 eV or an etch stop layer with bandgap=active layer bandgap+2 kT≈active layer bandgap+0.050 eV may be preferred.

A lattice-mismatched etch stop layer may be thin. In general, the larger the lattice mismatch, the thinner the layer should be in order to avoid strain relaxation. For example, an etch stop layer composed of (Al_(x)Ga_(1-x))_(0.60)In_(0.40)P grown on GaAs should be kept below a thickness of approximately 300 Å, while an etch stop layer composed of (Al_(x)Ga_(1-x))_(0.55)In_(0.45)P grown on GaAs should be kept below a thickness of approximately 800 Å to avoid strain relaxation. Thinner etch stop layers of these compositions may be preferred to avoid absorption if these compositions are not transparent to light emitted by the active layer. For example, a lattice-mismatched etch stop layer 20 may be less than 250 Å thick, more preferably less than 150 Å, and more preferably less than 130 Å.

The addition of AlP to a lattice-matched or lattice-mismatched etch stop layer may increase the temperature at which the etch stop layer is grown, which may favorably suppress the incorporation of oxygen impurities in the etch stop layer.

In some embodiments, multiple etch stop layers are included in the device. Multiple etch stop layers may be separated from each other by GaAs layers, though they need not be. At least one of these multiple etch stop layers may be composed of phosphide layers, such as InGaP or AlInGaP, while one or more other etch stop layers may be composed of arsenide layers such as AlGaAs. The device layers are grown over the last etch stop layer. Any of the etch stop layers described in the embodiments above may be used in a device with multiple etch stop layers. The etch stop layers in a device may each have the same properties (such as composition and thickness), though they need not. In a first example, a first InGaP etch stop layer is grown over a GaAs substrate, followed by a layer of GaAs, followed by a second InGaP etch stop layer. In a second example, an AlGaAs first etch stop layer is grown over a GaAs substrate, followed by an InGaP second etch stop layer. In a third example, an AlGaAs first etch stop layer is grown over a GaAs substrate, followed by an AlInGaP second etch stop layer.

Any of the above-described approaches, either individually, or in arbitrary combinations, may decrease internal absorption and therefore increase LED light output or WPE.

Another method of increasing the WPE of AlGaInP LEDs is to reduce the forward voltage V_(f) of the device. One source of increased V_(f) in a wafer-bonded transparent substrate AlGaInP LED is the wafer bonded interface between the transparent GaP substrate 18 and the AlGaInP device layers 14, which may contain incomplete “dangling” bonds, or impurities such as carbon, oxygen, or organic or inorganic compounds associated with the crystal growth, etching, and wafer bonding processes.

These dangling bonds or impurities typically create electronic defect states at or near the wafer-bonded interface that hinder carrier transport across the interface. One method of decreasing the effect of these defect states on V_(f) is to dope the region at or near the wafer-bonded interface, as illustrated in FIG. 5. In the device of FIG. 5, device layers 14 are bonded to transparent substrate 18 by an interface between etch stop layer 20, grown with device layers 14, and an InGaP bonding layer 22, grown on transparent substrate 18. InGaP bonding layer 22 may have an InP composition between, for example, 0% and 50%, more preferably between 5% and 30%, and more preferably between 8% and 16%. In a conventional device, the layers forming the bonded interface are typically doped to a dopant concentration of approximately 1×10¹⁸ cm⁻³. In the device illustrated in FIG. 5, the dopant concentration in one or both of bonding layer 22 and etch stop layer 20 is at least 2×10¹⁸ cm⁻³, more preferably at least 5×10¹⁸ cm⁻³, and more preferably at least 7×10¹⁸ cm⁻³, up to, for example, 2×10¹⁹ cm⁻³. In a preferred embodiment, the dopant is Te, though Si, S, or any other suitable dopant including p-type dopants may be used. The preferred doping levels may be higher when using a dopant such as Si, which is typically not fully activated. In addition, the optimum InP composition in bonding layer 22 may be higher, since the smaller Si atoms do not add additional strain to the lattice.

Device layers 14 include a light emitting region sandwiched between an n-type region and a p-type region. The light emitting region includes at least one light emitting layer, which is often undoped. In some embodiments, one or both of etch stop layer 20 and bonding layer 22 are more heavily doped than one or both of the n-type region and the p-type region.

On the top side of the bonded interface illustrated in FIG. 5, etch stop layer 20 may be a conventional thick InGaP layer that is lattice-matched to GaAs, or an etch stop layer or layers according to embodiments of the invention, as described above. In the prior art device illustrated in FIG. 1, an InGaP etch stop layer 12 is grown on a GaAs buffer layer which is grown on a GaAs substrate 10. The transition from GaAs to InGaP or to (Al_(x)Ga_(1-x))_(y)In_(1-y)P requires the gas phase chemistry to be changed from AsH₃ in the GaAs layers to PH₃ in the InGaP or (Al_(x)Ga_(1-x))_(y)In_(1-y)P layers, and a growth pause is typically used for this AsH₃ to PH₃ switching sequence. In some embodiments of the invention, the dopant source flow is left on during this growth pause in order to increase the dopant concentration in etch stop layer 20. The surface of the wafer is thus pre-purged with dopant as growth of the etch stop layer begins, which may increase the dopant concentration in etch stop layer 20. In some embodiments, the flow of PH₃ is reduced during growth of etch stop layer 20. In such cases, the PH₃ flow used during growth of etch stop layer 20 may be less than that used to grow device layers 14. For example, in some embodiments, the PH₃ flow used to grow etch stop layer 20 may be only 80% of the lowest PH₃ flow used to grow device layers 14. In other embodiments, the PH₃ flow used to grow layer 20 may be only 50% of the lowest PH₃ flow used to grow device layers 14.

On the bottom side of the bonded interface illustrated in FIG. 5 is bonding layer 22. Transparent substrate 18 is composed of GaP and bonding layer 22 is composed of In_(x)Ga_(1-x)P, where x is typically between 0% and 50%, more preferably between 5% and 30%, and more preferably between 8% and 16%. Since x is typically not 0%, bonding layer 22 is not lattice matched to the GaP substrate 18, and InGaP bonding layer 22 is grown to a thickness that typically is in the range from 0.5× to 3× the Matthews-Blakeslee critical thickness for strain relaxation. If relaxed, the InGaP bonding layer 22 typically has a mild cross hatch on the wafer surface, with a peak to valley surface roughness ˜5 to 15 nm, and an RMS roughness ˜2 to 3 nm in a 10×10 or 50×50 pm atomic force microscope image.

High doping in the bonding layer is conventionally achieved by increasing the dopant source flow. In the case of large dopant atoms such as Te, there is a significant competition between the incorporation of large dopant atoms such as Te and the incorporation of large matrix element atoms such as indium into the smaller GaP crystal lattice. This competition creates a feedback loop between Te suppression and indium suppression in InGaP bonding layer 22. Maintaining the desired InP composition while simultaneously increasing the Te doping concentration requires the use of higher Te doping source flow, but the higher Te doping source flow suppresses indium incorporation and reduces InP composition, which requires the use of higher indium source flow. This higher indium source flow in turn suppresses Te incorporation and requires even higher Te doping source flow, which in turn requires even higher indium source flow. This competition often results in either too little InP in bonding layer 22, or too much InP in bonding layer 22, thus making it difficult to reproducibly grow a bonding layer of the desired thickness, InP composition, and dopant concentration. Too much InP can lead to the onset of a three dimensional island growth mode which gives a surface that is too rough, and often results in films that are highly defective and non-conducting, producing an LED with high V_(f). Too little InP can result in a poor quality bond, and bubbles at the bonded interface. Since InP has a weaker bond strength than GaP, the presence of InP at the wafer bonded interface allows for more atomic re-arrangement at the wafer bonded interface during wafer bonding, and thus improves the bond between transparent substrate 18 and etch stop layer 20. A minimum amount of InP is therefore preferred at the bonded interface.

In some embodiments of the invention, InGaP bonding layer 22 is grown to a thickness where bonding layer 22 relaxes enough to permit more incorporation of dopant. For example, bonding layer 22 may be grown to a thickness greater than 3000 Å thick, more preferably between 5,000 and 20,000 Å, and more preferably between 5,000 and 10,000 Å, which may exceed the Matthews-Blakeslee critical thickness by as much as 3× or more. As the thickness of bonding layer 22 increases, the surface roughness typically increases, for example to a peak to valley surface roughness ˜15 nm to ˜50 nm or more, and RMS roughness of 3 nm to 6 nm or more. The rough surface and reduced strain may decrease the competition between In and Te incorporation in the bonding layer, and may substantially decouple the interaction between In and Te incorporation into the bonding layer, permitting the incorporation of more Te for a given Te doping source flow. This decoupling of the Te and In incorporation may result in a more reproducible manufacturing process. In some embodiments, bonding layer 22 is grown thick enough to begin to substantially relax, and a constant doping source flow is used during growth of InGaP bonding layer 22, resulting in a dopant concentration that naturally increases for a fixed doping source flow rate. In other embodiments, a fixed dopant source flow is used until the InGaP bonding layer 22 substantially relaxes, then a higher dopant source flow is used to further increase the dopant concentration in the film without substantially decreasing the indium composition in the film, or without increasing the indium source flow. In such an embodiment, the doping concentration in the film can be increased to greater than 1×10¹⁹ cm⁻³, while maintaining the InP composition in bonding layer 22 to within 0.5% of the target value, with no change in indium source flow. In some embodiments, at least a part of the InGaP bonding layer is doped to a concentration of at least 5×10¹⁸ cm⁻³.

The increased surface roughness of bonding layer 22 may also increase the wafer bonding yield by decreasing bubbles at the wafer-bonded interface, in contrast to Hoshi, who teaches in U.S. Pat. No. 5,196,375 that smoother surfaces with peak to valley roughness <13 nm are preferred for low bubble density in wafer-bonded layers.

In a first example of a TS AlGaInP device according to embodiments of the invention, the etch stop layer is conventional, for example, InGaP lattice-matched to GaAs grown to a thickness greater than 250 Å. Bonding layer 22 is InGaP with an InP composition between 0% and 50%, more preferably between 5% and 30%, and more preferably between 8% and 16%, grown to a thickness greater than 700 Å, and doped with Te to a concentration of 8×10¹⁸ cm⁻³. The V_(f) of such a device has been observed to be less than the V_(f) of a conventional device.

In a second example of a TS AlGaInP device according to embodiments of the invention, the etch stop layer is conventional, for example, InGaP lattice-matched to GaAs grown to a thickness greater than 250 Å. Bonding layer 22 is InGaP with an InP composition between 0% and 50%, more preferably between 5% and 30%, and more preferably between 8% and 16%, grown to a thickness between 2,000 and 20,000 Å, and doped with Te to a concentration of 8×10¹⁸ cm⁻³. The V_(f) of such a device has been observed to be less than the V_(f) of a conventional device.

In a third example, etch stop layer 20 is InGaP lattice-matched to GaAs, grown to a thickness less than 150 Å and doped with Te to a concentration less than 10¹⁸ cm⁻³, according to embodiments of the invention. Bonding layer 22 is InGaP with an InP composition between 0% and 50%, more preferably between 5% and 30%, and more preferably between 8% and 16%, grown to a thickness between 2,000 and 20,000 Å, and doped with Te to a concentration of 8×10¹⁸ cm⁻³. The V_(f) of such a device has been observed to be about the same as the V_(f) of a conventional device, though the device has higher light output than a conventional device.

In a fourth example, etch stop layer 20 is AlGaInP lattice-mismatched to GaAs, grown thin enough to avoid strain relaxation, with, for example, a composition of (Al_(0.10)Ga_(0.90))_(0.55)In_(0.45)P and a thickness less than 500 Å, doped with Te to a concentration greater than 2×10¹⁸ cm⁻³. Bonding layer 22 is InGaP with an InP composition between 0% and 50%, more preferably between 5% and 30%, and more preferably between 8% and 16%, grown to a thickness between 2,000 and 20,000 Å, and doped with Te to a concentration of 8×10¹⁸ cm⁻³.

In a fifth example, the active layer is In_(1-y)Ga_(y)P with 0.45≦y≦0.55, and etch stop layer 20 is AlGaInP lattice-mismatched to GaAs, grown thin enough to avoid strain relaxation, with, for example, a composition of (Al_(0.10)Ga_(0.90))_(0.55)In_(0.45)P and a thickness less than 500 Å, doped with Te to a concentration greater than 5×10¹⁷ cm⁻³. Bonding layer 22 is InGaP with an InP composition between 8% and 16%, grown to a thickness between 800 and 20,000 Å, and doped with Te to a concentration greater than 1×10¹⁸ cm⁻³.

FIG. 6 is an exploded view of a packaged light emitting device, as described in more detail in U.S. Pat. No. 6,274,924. A heat-sinking slug 100 is placed into an insert-molded leadframe. The insert-molded leadframe is, for example, a filled plastic material 105 molded around a metal frame 106 that provides an electrical path. Slug 100 may include an optional reflector cup 102. The light emitting device die 104, which may be any of the devices described in the embodiments above, is mounted directly or indirectly via a thermally conducting submount 103 to slug 100. A cover 108, which may be an optical lens, may be added.

Having described the invention in detail, those skilled in the art will appreciate that, given the present disclosure, modifications may be made to the invention without departing from the spirit of the inventive concept described herein. For example, though the embodiments described herein are III-P light emitting diodes, it is to be understood that other devices, such as lasers, and other materials systems are within the scope of the invention. Therefore, it is not intended that the scope of the invention be limited to the specific embodiments illustrated and described. 

1. A device comprising: a first semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region; a second semiconductor structure; and a bond formed at an interface disposed between the first and second semiconductor structures; wherein: the bond connects the first semiconductor structure to the second semiconductor structure; and a semiconductor layer adjacent to the interface is doped to a concentration of at least 2×10¹⁸ cm⁻³.
 2. The device of claim 1 wherein a semiconductor layer adjacent to the interface is doped to a concentration of at least 5×10¹⁸ cm⁻³ and has a thickness greater than 3000 Å.
 3. The device of claim 1 wherein a semiconductor layer adjacent to the interface is an InGaP layer between 5,000 and 10,000 Å thick and doped with Te to a concentration of at least 5×10¹⁸ cm⁻³.
 4. The device of claim 3 wherein: the semiconductor layer adjacent to the interface is a first semiconductor layer adjacent to the interface; and a second semiconductor layer adjacent to the interface is an InGaP layer less than 250 Å thick and doped with Te.
 5. The device of claim 1 wherein a semiconductor layer adjacent to the interface has a peak-to-valley roughness greater than 15 nm.
 6. The device of claim 1 wherein a semiconductor layer adjacent to the interface has a bulk lattice constant different from a bulk lattice constant of GaAs.
 7. The device of claim 6 wherein the semiconductor layer adjacent to the interface with the bulk lattice constant different from a bulk lattice constant of GaAs is one of InGaP and AlGaInP.
 8. The device of claim 1 wherein the semiconductor layer adjacent to the interface has a graded composition.
 9. The device of claim 1 wherein a band gap of a semiconductor layer adjacent to the interface is greater than a band gap of the light emitting layer.
 10. The device of claim 1 wherein a band gap of a semiconductor layer adjacent to the interface is greater than a band gap of the light emitting layer plus 0.025 eV.
 11. The device of claim 1 wherein the second semiconductor structure comprises a transparent GaP layer at least 10 μm thick.
 12. The device of claim 1 wherein a semiconductor layer adjacent to the interface is more heavily doped than at least one of the p-type region and the n-type region.
 13. The device of claim 1 wherein: the semiconductor layer adjacent to the interface is a first semiconductor layer adjacent to the interface; and the first semiconductor layer adjacent to the interface is AlGaInP with a thickness less than 500 Å and doped with Te to a concentration greater than 2×10¹⁸ cm⁻³; a second semiconductor layer adjacent to the interface is InGaP with an InP composition between 8% and 16%, with a thickness between 2,000 and 20,000 Å, and doped with Te to a concentration of 8×10¹⁸ cm⁻³.
 14. A method comprising: growing a first semiconductor structure on a GaAs substrate, the first semiconductor structure comprising: an etch stop layer with a thickness less than 150 Å; and an AlGaInP light emitting layer disposed between an n-type region and p-type region; removing the GaAs substrate; and bonding the first semiconductor structure to a second semiconductor structure.
 15. The method of claim 14 wherein the etch stop layer is InGaP or AlGaInP with an InP composition between 45 and 50%.
 16. The method of claim 14 wherein the etch stop layer and the GaAs substrate have the same bulk lattice constant.
 17. The method of claim 14 wherein the etch stop layer and the GaAs substrate have different bulk lattice constants.
 18. The method of claim 14 wherein: the second semiconductor structure comprises a bonding layer; and the first semiconductor structure and the second semiconductor structure are bonded by a bond disposed between the etch stop layer and the bonding layer.
 19. The method of claim 18 wherein the bonding layer has a thickness of at least 5000 Å.
 20. The method of claim 18 wherein the bonding layer is doped to a concentration of at least 5×10¹⁸ cm⁻³.
 21. The method of claim 14 wherein: the etch stop layer is a second etch stop layer; the first semiconductor structure further comprises a first etch stop layer.
 22. The method of claim 21 wherein the first and second etch stop layers have different compositions.
 23. The method of claim 21 wherein the first etch stop layer is AlGaAs and the second etch stop layer is one of InGaP and AlInGaP.
 24. A method comprising: growing a first semiconductor structure on a GaAs substrate, the first semiconductor structure comprising: an etch stop layer with a bulk lattice constant different from a lattice constant of GaAs; and an AlGaInP light emitting layer disposed between an n-type region and p-type region; removing the GaAs substrate; and bonding the first semiconductor structure to a second semiconductor structure.
 25. The method of claim 24 wherein: the first semiconductor structure is bonded to the second semiconductor structure by a bond disposed at an interface between the etch stop layer and a bonding layer; the etch stop layer is AlGaInP with a thickness less than 500 Å and doped with Te to a concentration greater than 5×10¹⁷ cm⁻³; and the bonding layer is InGaP with an InP composition between 8% and 16%, with a thickness between 800 and 20,000 Å, and doped with Te to a concentration greater than 1×10¹⁸ cm⁻³.
 26. The method of claim 24 further comprising forming the second semiconductor structure, wherein forming the second semiconductor structure comprises: providing a transparent substrate; and growing a bonding layer over the transparent substrate; wherein the bonding layer has a bulk lattice constant different from a bulk lattice constant of the transparent substrate; and the bonding layer is grown to a thickness greater than a critical thickness for strain relaxation for the bonding layer. 